NID9N05ACLT4G
Manufacturer:
On Semiconductor
Mfr.Part #:
NID9N05ACLT4G
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 1.74 W 59 V Continuous Drain Current (ID):9 A 7 nC
| Parameter | Value |
|---|---|
| Length | 6.22 mm |
| Width | 6.73 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 2.38 mm |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Max Power Dissipation | 1.74 W |
| Power Dissipation | 1.74 W |
| Threshold Voltage | 1.75 V |
| Number of Channels | 1 |
| Input capacitance | 250 pF |
| Continuous Drain Current (ID) | 9 A |
| Rds On Max | 90 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Turn-On Delay Time | 200 ns |
| Turn-Off Delay Time | 2.5 µs |
| Element Configuration | Single |
| Gate Charge | 7 nC |
| Drain to Source Resistance | 90 mΩ |
| Nominal Vgs | 1.75 V |
| Gate to Source Voltage (Vgs) | 15 V |
| Drain to Source Breakdown Voltage (Vds) | 59 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.3 V |
| FET Type(Transistor Polarity) | N-Channel |
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